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Ferroelectric-gate field effect transistor memories : device physics and applications

フォーマット:
図書
責任表示:
Byung-Eun Park ... [et al.], editors
言語:
英語
出版情報:
Dordrecht : Springer, c2016
形態:
xviii, 347 p. : ill. (some col.) ; 25 cm
著者名:
Park, Byung-Eun  
シリーズ名:
Topics in applied physics ; 131 <BA00371072>
書誌ID:
BB22187267
ISBN:
9789402408393 [9402408398]  CiNii Books  Webcat Plus  Google Books
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