Defects in hydrogenated amorphous silicon-carbon alloy films prepared by glow discharge decomposition and sputtering

フォーマット:

論文

責任表示:

Morimoto, Akiharu ; Miura, T. ; Kumeda, Minoru ; Shimizu, Tatsuo ; 森本, 章治

言語:

英語

出版情報:

American Institute of Physics, 1982

著者名:

• Morimoto, Akiharu
• Miura, T.
• Kumeda, Minoru
• Shimizu, Tatsuo
• 森本, 章治

掲載情報:

Journal of Applied Physics

ISSN:

0021-8979      
1089-7550      

巻:

53

通号:

11

開始ページ:

7299

終了ページ:

7305

バージョン:

publisher

概要:

金沢大学理工研究域電子情報通信学系<br />Properties of hydrogenated amorphous silicon-carbon alloy (a-Si 1-xCx: H) films prepared by radio frequency (rf) glow discharge decomposition and rf sputtering have been investigated by means of electron spin re … sonance (ESR), infrared absorption, optical absorption, and photoconductivity measurements. Although the number of C-H per C atom [C-H]/[C] is larger than that of Si-H per Si atom [Si-H]/[Si], the ESR spin density increases greatly with the C content. The increase in the density of dangling bonds may be related to the fact that the number of H atoms in gathered phase increases with an increase in x. ESR measurements also give useful information about the preferential formation of C or Si dangling bonds and the atomic distribution of Si and C through a compositional dependence of the g value. A remarkable feature for a-Si1-xCx: H film is that the presence of C atoms in the amorphous network makes the Si-H bond in a-Si 1-xCx: H more stable than that in a-Si:H. 続きを見る

URL:

http://hdl.handle.net/2297/00064708