Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

フォーマット:

論文

責任表示:

Wang, Z. P. ; Morimoto, Akiharu ; Kawae, Takeshi ; Ito, H. ; Masugata, Katsumi

言語:

英語

出版情報:

Elsevier B.V., 2011-08-01

著者名:

• Wang, Z. P.
• Morimoto, Akiharu
• Kawae, Takeshi
• Ito, H.
• Masugata, Katsumi

掲載情報:

Physics Letters, Section A: General, Atomic and Solid State Physics

ISSN:

0375-9601      

巻:

375

通号:

33

開始ページ:

3007

終了ページ:

3011

バージョン:

author

概要:

Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulsed laser deposition (PLD) in nitrogen (N2) environment. The AlN preferential orientation changes from (002) to (100) with increasing N2 pressure. Such different behaviors are discussed in terms of deposition-rate-dependent preferential orientation, kinetic energy of depositing species and confinement of laser plume. Finally, sample deposited at … 0.9 Pa is proved to have the highest (002) peak intensity, the lowest FWHM value, the highest deposition rate and a relatively low RMS roughness (1.138 nm), showing the optimal growth condition for c-axis-oriented AlN growth at this N2 pressure. © 2011 Elsevier B.V. All rights reserved. 続きを見る

URL:

http://hdl.handle.net/2297/28987