Improvement of charge trapping characteristics of Al2O 3/Al-rich Al2O3/SiO2 stacked films by thermal annealing

フォーマット:

論文

責任表示:

Nakata, Shunji ; Kato, Takashi ; Ozaki, Shinya ; Kawae, Takeshi ; Morimoto, Akiharu

言語:

英語

出版情報:

Elsevier B.V., 2013-09-02

著者名:

• Nakata, Shunji
• Kato, Takashi
• Ozaki, Shinya
• Kawae, Takeshi
• Morimoto, Akiharu

掲載情報:

Thin Solid Films

ISSN:

0040-6090      

巻:

542

開始ページ:

242

終了ページ:

245

バージョン:

author

概要:

Thin film Al2O3/Al-rich Al2O 3/SiO2 structures were fabricated on p-Si substrates. Radio-frequency magnetron co-sputtering was used to form Al-rich Al 2O3 thin film as the charge-trapping layer of nonvolatile Al2O3 memory. Capacitance-voltage measurements showed a large hysteresis due to charge trapping in the Al-rich Al2O 3 layer. The charge trap density was estimated to be 42.7 × 1018 cm- 3, which is the largest value ever reported for an … Al-rich Al2O3 layer; it is six times larger than that of a conventional metal-nitride-oxide-silicon memory. Thermal annealing was found to reduce the leakage current of the Al2O3 blocking layer, thereby providing this structure with better data retention at room temperature than an as-deposited one. In addition, the annealed structure was found to exhibit good data retention even at 100 C. © 2013 Elsevier B.V. All rights reserved. 続きを見る

URL:

http://hdl.handle.net/2297/35657