1.

論文
論文
1. Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition
Wang, Z. P. ; Morimoto, Akiharu ; Kawae, Takeshi ; Ito, H. ; Masugata, Katsumi
出版情報: Physics Letters, Section A: General, Atomic and Solid State Physics.  375  pp.3007-3011,  2011-08-01.  Elsevier B.V.
URL: http://hdl.handle.net/2297/28987
概要: Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulse … d laser deposition (PLD) in nitrogen (N2) environment. The AlN preferential orientation changes from (002) to (100) with increasing N2 pressure. Such different behaviors are discussed in terms of deposition-rate-dependent preferential orientation, kinetic energy of depositing species and confinement of laser plume. Finally, sample deposited at 0.9 Pa is proved to have the highest (002) peak intensity, the lowest FWHM value, the highest deposition rate and a relatively low RMS roughness (1.138 nm), showing the optimal growth condition for c-axis-oriented AlN growth at this N2 pressure. © 2011 Elsevier B.V. All rights reserved. 続きを見る
2.

論文
論文
2. Fatigue-resistant epitaxial Pb(Zr,Ti)O3 capacitors on Pt electrode with ultra-thin SrTiO3 template layers
Takahara, Seiichi ; Morimoto, Akiharu ; Kawae, Takeshi ; Kumeda, Minoru ; Yamada, Satoru ; Ohtsubo, Shigeru ; Yonezawa, Yasuto
出版情報: Thin Solid Films.  516  pp.8393-8398,  2008-10-01.  Elsevier
URL: http://hdl.handle.net/2297/11735
概要: 金沢大学理工研究域電子情報学系 金沢大学工学部<br />Fatigue-resistant epitaxial Pb(Zr,Ti)O3 capacitors on Pt electrode with ultra-thin SrTiO3 template layers<br />This article has not been published yet.