1.

図書

図書
compiled and edited by Walter H. Gitzen
出版情報: Columbus, Ohio : American Ceramic Society, c1970
シリーズ名: Special publication ; no. 4
2.

論文

論文
Nakata, Shunji ; Kato, Takashi ; Ozaki, Shinya ; Kawae, Takeshi ; Morimoto, Akiharu
出版情報: Thin Solid Films.  542  pp.242-245,  2013-09-02.  Elsevier B.V.
URL: http://hdl.handle.net/2297/35657
概要: Thin film Al2O3/Al-rich Al2O 3/SiO2 structures were fabricated on p-Si substrates. Radio-frequency magnetron co-sputteri ng was used to form Al-rich Al 2O3 thin film as the charge-trapping layer of nonvolatile Al2O3 memory. Capacitance-voltage measurements showed a large hysteresis due to charge trapping in the Al-rich Al2O 3 layer. The charge trap density was estimated to be 42.7 × 1018 cm- 3, which is the largest value ever reported for an Al-rich Al2O3 layer; it is six times larger than that of a conventional metal-nitride-oxide-silicon memory. Thermal annealing was found to reduce the leakage current of the Al2O3 blocking layer, thereby providing this structure with better data retention at room temperature than an as-deposited one. In addition, the annealed structure was found to exhibit good data retention even at 100 C. © 2013 Elsevier B.V. All rights reserved. 続きを見る