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図書 |
図書
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J.B. Goodenough ... [et al.] ; Herausgeber, K.-H. Hellwege und A.M. Hellwege
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図書
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edited by B. Cockayne and D.W. Jones
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論文 |
論文
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Nakata, Shunji ; Maeda, Ryoji ; Kawae, Takeshi ; Morimoto, Akiharu ; Shimizu, Tatsuo
概要:
A thin-film structure comprising Al2O3/Al-rich Al2O3/SiO2 was fabricated on Si substrate. We used radio-frequency magnet
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ron co-sputtering with Al metal plates set on an Al2O3 target to fabricate the Al-rich Al2O 3 thin film, which is used as a charge storage layer for nonvolatile Al2O3 memory. We investigated the charge trapping characteristics of the film. When the applied voltage between the gate and the substrate is increased, the hysteresis window of capacitance-voltage (C-V) characteristics becomes larger, which is caused by the charge trapping in the film. For a fabricated Al-O capacitor structure, we clarified experimentally that the maximum capacitance in the C-V hysteresis agrees well with the series capacitance of insulators and that the minimum capacitance agrees well with the series capacitance of the semiconductor depletion layer and stacked insulator. When the Al content in the Al-rich Al2O3 is increased, a large charge trap density is obtained. When the Al content in the Al-O is changed from 40 to 58%, the charge trap density increases from 0 to 18 × 1018 cm-3, which is 2.6 times larger than that of the trap memory using SiN as the charge storage layer. The device structure would be promising for low-cost nonvolatile memory. © 2011 Elsevier B.V. All rights reserved.
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論文 |
論文
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Nakata, Shunji ; Kato, Takashi ; Ozaki, Shinya ; Kawae, Takeshi ; Morimoto, Akiharu
概要:
Thin film Al2O3/Al-rich Al2O 3/SiO2 structures were fabricated on p-Si substrates. Radio-frequency magnetron co-sputteri
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ng was used to form Al-rich Al 2O3 thin film as the charge-trapping layer of nonvolatile Al2O3 memory. Capacitance-voltage measurements showed a large hysteresis due to charge trapping in the Al-rich Al2O 3 layer. The charge trap density was estimated to be 42.7 × 1018 cm- 3, which is the largest value ever reported for an Al-rich Al2O3 layer; it is six times larger than that of a conventional metal-nitride-oxide-silicon memory. Thermal annealing was found to reduce the leakage current of the Al2O3 blocking layer, thereby providing this structure with better data retention at room temperature than an as-deposited one. In addition, the annealed structure was found to exhibit good data retention even at 100 C. © 2013 Elsevier B.V. All rights reserved.
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| 5.
論文 |
論文
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福士, 圭介
概要:
Water is most important transport media for elements under earth surface condition. Most of the elements are dissolved f
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rom rocks by water, while those are removed from water by rocks. The mobility of the elements is governed by these processes. The transport of the elements via water under the surface condition has been studied for understanding of weathering of rocks and formation of ore deposits. Recently, pollutions of water and soils by toxic elements have become the environmental concern. Therefore, this topic also has become an important subject to understand the behavior of toxic elements at earth surfaces. I have studied (1) the chemical reactions that govern the distributions of elements between water and rocks and (2) the quantitative prediction of element distributions based on the chemical reactions under the surface condition. In the latter, I am focusing on adsorption processes of minerals' surface, that are not still well understood so far. A quantitative way to consider the adsorption processes is surface compelxation modeling. In this paper, I briefly review the history and current status of surface complexation modeling.<br />2010年度日本地球化学会奨励賞受賞記念論文
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