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森本, 章治 ; 藤解, 和也
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飯山, 宏一 ; 森本, 章治
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岡島, 厚 ; 山崎, 光悦 ; 森本, 章治 ; 長野, 勇 ; 近田, 康夫 ; 畑, 朋延
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森本, 章治 ; 米山, 猛 ; 畑, 朋延
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森本, 章治
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Min, Hoonke ; Fukushi, Iwao ; Masuda, Atsushi ; Morimoto, Akiharu ; Kumeda, Minoru ; Shimizu, Tatsuo ; 森本, 章治
概要:
金沢大学理工研究域電子情報通信学系<br />The bilayer structures composed of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorp
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hous silicon nitride (a-Si3N4:H) are prepared on fused-quartz substrates and their interfacial Si dangling bonds (DBs) are evaluated by electron spin resonance (ESR). The ESR study reveals that the bottom nitride (BN) structure (a-Si:H/a-Si3N4:H/fused quartz) has a smaller amount of neutral DBs in the interface than the top nitride (TN) structure (a-Si3N4:H/a-Si:H/fused quartz). The photoconductivity measurements also support this finding. A larger amount of charged DBs in the interface, however, exist in the BN structure than in the TN structure. The larger amount of interfacial neutral DBs in the TN structure is likely to be caused by the UV irradiation from the plasma during the deposition of a-Si3N4:H layer.© 1995 American Institute of Physics.
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Masuda, Atsushi ; Morimoto, Akiharu ; Kumeda, Minoru ; Shimizu, Tatsuo ; Yonezawa, Yasuto ; Minamikawa, Toshiharu ; 森本, 章治
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金沢大学理工研究域電子情報通信学系<br />A novel oxidation process in hydrogenated amorphous silicon (a-Si:H) using nitrous oxide (N2O) pl
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asma was studied in detail for the first time. The N2O-plasma oxidized a-Si:H has an excellent interface whose interfacial defect density is largely reduced compared with the O 2-plasma oxidized a-Si:H. It was elucidated that this oxide layer has almost stoichiometric composition and contains a small amount of N piling up at the interface between the oxide layer and a-Si:H layer. It also turned out that this process has less ion damage than the O2-plasma oxidation process. The reason for the reduction of the interfacial defect density is attributed to the presence of N at the interface and/or less ion damage in this process.
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Morimoto, Akiharu ; Matsumoto, Minoru ; Yoshita, Masahiro ; Kumeda, Minoru ; Shimizu, Tatsuo ; 森本, 章治
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金沢大学理工研究域電子情報通信学系<br />O, N, or C impurity was separately incorporated into a-Si:H films by hot-wall glow discharge deco
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mposition. The effect of the impurity incorporation was investigated by electrical and electron spin resonance measurements. Both O and N impurities were found to increase the dark conductivity by decreasing its activation energy in a-Si:H films. Furthermore, it was found that O and N impurities delay the photoresponse. C impurity, however, has no appreciable effect on them. These findings suggest that O and N impurities shift the Fermi level upward and form a trapping state for photoexcited electrons, supporting our O+3 and N+4 model.
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Xu, Xixiang ; Morimoto, Akiharu ; Kumeda, Minoru ; Shimizu, Tatsuo ; 森本, 章治
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金沢大学理工研究域電子情報通信学系<br />We find the thermally induced defects in undoped hydrogenated amorphous silicon carbon (a-Si1-xCx
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: H) by electron spin resonance and conductivity measurements. The equilibrium temperature (Te) determined from the annealing temperature-dependent density of dangling bonds after fast cooling decreases with increasing C content, from 190 °C for hydrogenated amorphous silicon to 150 °C for a-Si0.82C 0.18: H. Possible microscopic mechanisms for the observed thermally induced defects in a-Si1-xCx: H alloys are discussed.
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Liu, Chen ; Kawae, Takeshi ; Tsukada, Yoshinori ; Morimoto, Akiharu ; Naganuma, Hiroshi ; Nakajima, Takashi ; Okamura, Shoichiro ; 森本, 章治
概要:
金沢大学理工研究域電子情報通信学系<br />We report the preparation of (Bi,Pr)(Fe,Mn)O 3(BPFM)/SrRuO 3 (SRO)-Pt/CoFe 2O 4(CFO) layered film
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structure on (100) SrTiO 3 substrate by pulsed laser deposition method and their structural and electrical properties. Favorable ferroelectric properties of BPFM were observed in the layered film structure with (100)-oriented growth of BPFM, SRO, and CFO. Variation of polarization vs electric field loops of BPFM by applying DC magnet field was observed, and the remnant polarization was found to increase by 3% with increasing the applied magnetic field from 0 to 10 kOe. The magnetoelectric coefficient in the present structure was estimated to be 1.5 V/(cmOe). © 2012 American Institute of Physics.
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